参考书目 发表于 2025-3-26 22:40:07
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The ,/, Interface: The Origin of the 2D Electron Liquid and the Fabrication,plaining the origin of the charge at the interface. The second part focuses on the importance of the growth techniques and parameters like temperature, oxygen pressure, post-deposition annealing and their influence on the electronic transport properties.Heart-Rate 发表于 2025-3-27 12:29:38
Transport Properties of TMO Interfaces,h emerging states is found at the . interface, which also attracted most of the initial interest for this new field of research (in the TMO context). Here we review some properties of this peculiar interface as investigated by transport measurements allowing the studies of different effects such asfiscal 发表于 2025-3-27 16:08:58
ARPES Studies of Two-Dimensional Electron Gases at Transition Metal Oxide Surfaces, of oxide electronics. Such 2DELs are usually created by engineering band offsets and charge transfer at heterointerfaces. However, in 2011 it was shown that highly itinerant 2DELs can also be induced at bare surfaces of different transition metal oxides where they are far more accessible to high re苦涩 发表于 2025-3-27 17:58:17
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Standing-Wave and Resonant Soft- and Hard-X-ray Photoelectron Spectroscopy of Oxide Interfaces,eV regime; using standing-wave excitation, created by reflection from either a multilayer heterostructure or atomic planes; tuning the photon energy to specific points near absorption resonances; and making use of near-total-reflection geometries. Applications to a variety of oxide and spintronic syDigitalis 发表于 2025-3-28 09:13:20
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Dynamical Mean Field Theory for Oxide Heterostructures,r these by dynamical mean field theory (DMFT). We discuss the physical situations in which DMFT is needed, not needed, and where it is actually not sufficient. By means of an example, ., we discuss step-by-step and figure-by-figure a density functional theory (DFT) + DMFT calculation. The second par