粉笔
发表于 2025-3-23 10:24:50
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使绝缘
发表于 2025-3-23 15:06:34
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Arboreal
发表于 2025-3-23 18:29:28
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Bumble
发表于 2025-3-24 01:40:20
Heike Stachrted in the literature concern metallic nanowires made of copper, gold, nickel, and their alloys and carbon nanotubes. Research has also been reported for nanowires with molecules having long chain structures (e.g., Silicon Diselenide (SiSe.)). Calculations have primarily focused on discrete simulat
盲信者
发表于 2025-3-24 02:20:17
Franco Furger,Bettina Heintzring sciences . Much of the excitement in this area of research has arisen from recognition that new phenomena and unprecedented integration density are possible with nanometer scale structures. Correspondingly, these ideas have driven scientists to develop methods for making nanostructures. I
Commonplace
发表于 2025-3-24 08:45:54
he ultimate miniaturization of electronic devices . Indeed, if the Si based micro-electronic technology continues along the Moore’s law of size scaling, individual devices will reach molecular scale in a decade. However, it is generally accepted that the micro-electronic technology at its
Affluence
发表于 2025-3-24 11:15:16
Peter Eulenhöfermaterials and sensors . For example, .-Ga.O., with direct band gap energy . ≈ 4.9 eV, exhibits conduction and luminescence properties, and thus has potential applications in optoelectronic devices and high-temperature stable gas sensors. In.O. (. = 3.55–3.75 eV) has been widely used in microelect
胆汁
发表于 2025-3-24 18:54:32
Anette Braundes systems: the group III-nitrides (specifically, AlN, GaN, InN and ternary Ga-In-N) and group IV-nitrides (Si.N. and ternary Si-C-N). During the last three decades, tremendous efforts have been devoted to the physics, chemistry and synthesis of GaN and related materials. The wurtzite polytypes of
虚度
发表于 2025-3-24 21:56:13
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辫子带来帮助
发表于 2025-3-25 01:32:26
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