Confess
发表于 2025-3-30 10:17:07
Michele Cini,Francesco Fucito,Mauro Sbragagliaectrically active zone of a silicon device. In a submicrometer structure a single metal precipitate may cause a distortion of electrical properties and consequently result in a faulty integrated circuit. Therefore economic production of devices requires materials and processes of the utmost purity.
解决
发表于 2025-3-30 16:22:37
Michele Cini,Francesco Fucito,Mauro Sbragagliaectrically active zone of a silicon device. In a submicrometer structure a single metal precipitate may cause a distortion of electrical properties and consequently result in a faulty integrated circuit. Therefore economic production of devices requires materials and processes of the utmost purity.
教唆
发表于 2025-3-30 20:04:59
, constituted one of the most exciting and significant developments in inorganic chemistry during the past 15 years. This chapter reviews the wide variety of metallaboranes that have been made by the reactions of transition-metal compounds with .-boranes or their anions. .-boranes have the formula B