Ornament
发表于 2025-3-25 04:33:20
Adsorption on Solid Surfaces,voted to the description of adsorption kinetics with emphasis on the phenomenology of adsorption, desorption and the corresponding isotherms. As important characterisation techniques Kelvin probe and photoemission measurements as well as desorption methods are discussed.
枯燥
发表于 2025-3-25 09:33:15
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Endearing
发表于 2025-3-25 14:32:57
Surface and Interface Physics: Its Definition and Importance,ce, corrosion and catalysis research as well as semiconductor technology and nanoelectronics is outlined. Also various inputs from other science branches as vacuum technology and particle beam optics are discussed.
使害羞
发表于 2025-3-25 19:47:14
Preparation of Well-Defined Surfaces, Interfaces and Thin Films,h vacuum (UHV) techniques is explained. Beside cleavage in UHV ion bombardment and annealing are presented as preparation techniques for clean surfaces. Special emphasis is put on evaporation and molecular beam epitaxy as well as on deposition techniques by means of gases and chemical reactions. Aug
BOON
发表于 2025-3-25 23:35:55
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TATE
发表于 2025-3-26 00:22:44
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爆米花
发表于 2025-3-26 04:28:37
Surface Phonons, three-dimensional systems as surfaces on bulk crystals consisting of more than one atomic species leads to Rayleigh waves and optical surface phonons. Hereby Fuchs–Kliewer phonons, their coupling to electronic surface plasmons and their detection by HREELS play a major role. Atom and molecular beam
大火
发表于 2025-3-26 11:05:21
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完全
发表于 2025-3-26 15:31:22
Space-Charge Layers at Semiconductor Interfaces,epletion layers and quantized accumulation and inversion layers the formal description is presented. Particular space charge layers on important semiconductors and their surface potentials are discussed , also with respect to applications. In this context also Fermi level pinning is explained.
一条卷发
发表于 2025-3-26 17:07:34
,Metal–Semiconductor Junctions and Semiconductor Heterostructures,tual induced gap states (VIGS) are introduced. The electronic structure of metal-semiconductor junctions and of semiconductor heterointerfaces are discussed in detail. As applications the Schottky barrier, modulation doping and high mobility two-dimensional electron gases (2DEG) as well as the high