cessation
发表于 2025-3-21 16:20:46
书目名称Simulation of Semiconductor Processes and Devices 2001影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0867646<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2001影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0867646<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2001网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0867646<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2001网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0867646<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2001被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0867646<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2001被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0867646<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2001年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0867646<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2001年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0867646<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2001读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0867646<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2001读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0867646<br><br> <br><br>
arrhythmic
发表于 2025-3-21 21:05:56
A Unified Model of Dopant Diffusion in SiGe.,The understanding of the effect of each physical mechanism driving dopant and point defect diffusion due to Ge leads to a unified formulation of diffusion for the usual dopants in SiGe material. The model calibration is deduced from a critical synthesis of the theoretical and experimental published studies.
transplantation
发表于 2025-3-22 02:00:59
Dynamics of p+ polysilicon gate depletion due to the formation of boron compounds in TiSi2,In dual workfunction gate technologies it can be observed, that p. poly gates of pMOSFETs tend to lose boron doping. This work presents a model for the transport of Si and B in the TiSi./polysilicon bilayer system that can explain the saturation of the B dose loss.
十字架
发表于 2025-3-22 05:18:56
Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective PotenAs MOSFET devices are aggressively scaled into the deep submicron regime quantum mechanical effects become increasingly important. We compare the recently proposed effective potential formalism with the density gradient approach for first order quantum simulations of sub 0.1μm MOSFETs within a modified drift diffusion framework.
过滤
发表于 2025-3-22 11:43:42
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脖子
发表于 2025-3-22 13:30:49
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连累
发表于 2025-3-22 21:01:33
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凝结剂
发表于 2025-3-23 01:00:03
Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon,ribes the thermal evolution of a supersaturation of Si interstitial atoms in dynamical equilibrium with all types of extrinsic defects. We show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantion energies.
BADGE
发表于 2025-3-23 03:40:13
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conceal
发表于 2025-3-23 09:15:11
A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si1-xGex by Carbiffusion of boron is strongly suppressed by a moderate concentration of substitutional C in Si._.Ge.. This suppression is due to an under saturation of Si selfinterstitials in the C-rich region. The results obtained from the proposed model are in good agreement with the measured values.