抛物线
发表于 2025-3-28 15:53:20
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LEERY
发表于 2025-3-28 22:27:34
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RAG
发表于 2025-3-29 01:12:28
978-3-642-42348-2Springer-Verlag Berlin Heidelberg 2011
高度表
发表于 2025-3-29 04:50:25
Schottky Diodes, blocking voltages, the resistance of the base will increase strongly due to the lack of charge carrier modulation, as will be shown in the following. Schottky power diodes have been used for a long time, but in the last years they have gained an increased importance in the medium power range:
CURT
发表于 2025-3-29 10:41:55
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ALIEN
发表于 2025-3-29 12:14:48
des sections on packaging and reliability.No other textbook Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understandin
Ferritin
发表于 2025-3-29 19:37:23
MOS Transistors, to the lack of the neighboring atom. Therefore, a thin oxide will always be built up on the surface or other atoms and molecules are adsorbed. Thus, these surface layers are normally electrically charged.
aqueduct
发表于 2025-3-29 20:49:58
Destructive Mechanisms in Power Devices,failure pictures appear to be similar, it is difficult to draw conclusions only from pictures. However in practice the engineer often has the problem to find the reason for failures, and the following sections might be helpful.
engrave
发表于 2025-3-30 00:01:22
Thyristors,s – the range of very high blocking voltages and very high currents. For high-voltage DC power transmission, thyristors with 8 kV blocking voltage and more than 5.6 kA rated current have been introduced in 2008 as a single device in the size of a 6-in. wafer .
排名真古怪
发表于 2025-3-30 05:03:04
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