medieval
发表于 2025-3-28 15:44:33
Carrier Diffusion Processes, current . .∇. ., where . . is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of . carriers in local variations in the type of doping, which is so typical for p-n junctions and transistors.
Budget
发表于 2025-3-28 20:31:46
Scattering Processes in a Spherical One-Valley Model,omagnetic, thermoelectric, thermomagnetic, etc., effects. We will now treat the important scattering mechanisms and find the energy dependence of r.. For those cases where a power law is found, the magnitude of the exponent . will be determined.
讨好美人
发表于 2025-3-28 23:04:04
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来这真柔软
发表于 2025-3-29 05:59:05
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agnostic
发表于 2025-3-29 09:07:53
Quantum Effects in Transport Phenomena, only domain of quantum mechanics in semiconductivity. Although most transport phenomena can be explained by assuming a classical electron gas, there are some which can be understood only by quantum mechanical arguments. In Sect. 9.1 we will treat phenomena which rely on the quantum mechanical ., wh
容易懂得
发表于 2025-3-29 12:12:13
Impact Ionization and Avalanche Breakdown,uctors may serve as model substances for gaseous plasmas since their ionic charges are practically immobile and therefore the interpretation of experimental data is facilitated. Impact ionization has been achieved both in the bulk of homogeneously doped semiconductors at low temperatures and in p-n
填满
发表于 2025-3-29 18:45:10
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–LOUS
发表于 2025-3-29 20:21:21
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高深莫测
发表于 2025-3-30 01:06:41
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indigenous
发表于 2025-3-30 05:28:42
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