博识 发表于 2025-3-28 15:43:54

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Ataxia 发表于 2025-3-28 21:01:32

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Jingoism 发表于 2025-3-29 02:30:05

Charge Transport and Scattering Processes in the Many-Valley Model,the . of the energy bands has proved to be a fruitful concept for a description of the observed anisotropy of electrical and optical phenomena. Cyclotron resonance (Sect. 11.11) provides a direct experimental determination of the effective masses in each valley for any crystallographic direction.

安定 发表于 2025-3-29 03:23:08

Quantum Effects in Transport Phenomena,are some which can be understood only by quantum mechanical arguments. In Sect. 9.1 we will treat phenomena which rely on the quantum mechanical ., while in Sects. 9.2–9.4 the quantization of electron orbits in a strong magnetic field with the formation of . will be the basis for an understanding of the . behavior of transport phenomena.

GEN 发表于 2025-3-29 08:47:10

Impact Ionization and Avalanche Breakdown,mental data is facilitated. Impact ionization has been achieved both in the bulk of homogeneously doped semiconductors at low temperatures and in p-n junctions at room temperature. We will discuss these cases separately.

indigenous 发表于 2025-3-29 13:28:16

Light Generation by Semiconductors,), are called .. While the former convert electrical energy into optical radiation, the latter do the inverse process. In this chapter we will consider light-emitting diodes (LED) and diode lasers .

CLAIM 发表于 2025-3-29 15:43:25

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巧思 发表于 2025-3-29 21:35:11

Textbook 19976th editionsics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattice

Biomarker 发表于 2025-3-30 02:04:20

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Cocker 发表于 2025-3-30 07:15:44

Energy Band Structure,tructures will be given in Sect. 2.4 and used for the calculation of charge transport in Chaps. 7, 8, while in Chaps. 4, 5, the transport properties will be calculated assuming the simple model of band structure (which is quite a good approximation for most purposes).
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查看完整版本: Titlebook: Semiconductor Physics; An Introduction Karlheinz Seeger Textbook 19976th edition Springer-Verlag Berlin Heidelberg 1997 Physics.Technology.