马具 发表于 2025-3-23 12:50:08

Optical Absorption and Reflection,electric and magnetic fields. Measurements of these effects provide very useful information about band structure and energy levels in semiconductors. For numerical purposes it may be worth noting that a quantum energy . of 1 eV is equivalent to a wave number v of 8060 cm. and to a wavelength λ of 1.

熔岩 发表于 2025-3-23 17:35:58

Light Generation by Semiconductors,e semiconductor laser may have a linewidth as low as 10. nm. These devices, together with photovoltaic diodes and solar cells (Sects. 5.8, 9, Chap. 12), are called . While the former convert electrical energy into optical radiation, the latter do the inverse process. In this chapter we will consider

needle 发表于 2025-3-23 20:04:17

Miscellaneous Semiconductors,nd organic semiconductors through the manufacture of a p-n junction from a polymer, polyacetylene. For production purposes, amorphous silicon may be of interest for solar cells for terrestrial applications if the efficiency of these cells can be doubled from the present ≈ 5% . T

ingenue 发表于 2025-3-24 00:41:09

http://reply.papertrans.cn/87/8649/864879/864879_14.png

晚来的提名 发表于 2025-3-24 05:26:07

Book 19822nd edition977, a Russian translation by Professor Yu. K. Pozhela and coworkers at Vilnius/USSR was published by Izdatelstvo "MIR", Mo­ scow. Since then new ideas have been developed in the field of semi­ conductors such as electron hole droplets, dangling bond saturation in amorphous silicon by hydrogen, or t

seroma 发表于 2025-3-24 07:58:34

http://reply.papertrans.cn/87/8649/864879/864879_16.png

作茧自缚 发表于 2025-3-24 13:44:39

http://reply.papertrans.cn/87/8649/864879/864879_17.png

评论者 发表于 2025-3-24 17:56:16

http://reply.papertrans.cn/87/8649/864879/864879_18.png

戏服 发表于 2025-3-24 21:00:02

http://reply.papertrans.cn/87/8649/864879/864879_19.png

Valves 发表于 2025-3-25 01:19:36

http://reply.papertrans.cn/87/8649/864879/864879_20.png
页: 1 [2] 3 4 5 6
查看完整版本: Titlebook: Semiconductor Physics; An Introduction Karlheinz Seeger Book 19822nd edition Springer-Verlag Berlin Heidelberg 1982 epitaxy.hydrogen.physic