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The Atomic Structure of Quantum Dots,view and cross-sectional geometry. Important conclusions are drawn also on the growth processes during quantum dot formation as well as during overgrowth. It is demonstrated that uncapped InAs quantum dots on GaAs(001) have a pyramidal shape with dominating {137} side facets and—in the case of large扫兴 发表于 2025-3-27 14:19:30
Theory of Excitons in InGaAs/GaAs Quantum Dots, and composition. Single-particle states, necessary for the CI-basis expansion, are calculated by eight-band .⋅. theory. Special emphasis is put on the role of strain and piezoelectricity, where the latter is treated up to second order. Finally, we address the inverse problem of fitting spectroscopi婚姻生活 发表于 2025-3-27 19:51:20
Phonons in Quantum Dots and Their Role in Exciton Dephasing,The change of the local elastic properties due to strain is calculated employing density functional theory and used as input for phonon calculations within continuum elasticity model. It is demonstrated that overall the exciton–phonon coupling strength is reduced, characteristic oscillations appearIncorporate 发表于 2025-3-28 00:38:44
Theory of the Optical Response of Singleand Coupled Semiconductor Quantum Dots,inement in less than three dimensions. In this chapter, the theory of both the linear optical properties and nonlinear dynamics of semiconductor quan- tum dots is discussed. The main focus is on the experimentally accessible quantities such as absorption/luminescence and pump-probe spectra. The resu哎呦 发表于 2025-3-28 05:52:37
,Theory of Nonlinear Transport for Ensembles of Quantum Dots,ulomb interaction on quantum dot charging (capacitance-voltage characteristics), on the average current (current-voltage characteristics), and on current fluctuations (quantum shot noise) in quantum dot layers embedded in .- or resonant tunneling devices. Our studies show the particular importance oPcos971 发表于 2025-3-28 06:44:07
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