cerebellum 发表于 2025-3-21 19:56:06

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BRACE 发表于 2025-3-21 22:23:05

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DEMUR 发表于 2025-3-22 03:24:03

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一再困扰 发表于 2025-3-22 07:49:55

Semiconductor Modeling Techniques978-3-642-27512-8Series ISSN 0933-033X Series E-ISSN 2196-2812

ADAGE 发表于 2025-3-22 11:31:04

Theory and Modelling for the Nanoscale: The ,* Tight Binding Approach,. We insist on the method’s ability to account for atomistic symmetries and to treat all the energy scales of electronic structures (from sub-meV quantities such as spin splittings to full-band properties like the optical index) using a single set of material parameters.

jagged 发表于 2025-3-22 14:50:57

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Hangar 发表于 2025-3-22 20:20:17

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小步舞 发表于 2025-3-22 22:39:33

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使习惯于 发表于 2025-3-23 04:49:11

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FLINT 发表于 2025-3-23 06:12:58

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查看完整版本: Titlebook: Semiconductor Modeling Techniques; Naci Balkan,Marie Xavier Book 2012 Springer-Verlag Berlin Heidelberg 2012 modelling vertical cavity dev