一个希拉里
发表于 2025-3-21 16:40:04
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愤愤不平
发表于 2025-3-21 23:30:56
Jean-Marc Baribeau,Nelson L. Rowell,David J. Lockwoodgle most preventable cause of mental retardation in the world. Therefore, the United Nations and the Heads of State of almost all the world‘s countries represented at the Summit for Children in 1990 adopted resolutions to eradicate the disorders induced by iodine deficiency (IDD) by the year 2000. F
ADAGE
发表于 2025-3-22 03:58:14
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东西
发表于 2025-3-22 07:55:02
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fetter
发表于 2025-3-22 12:46:39
Jennifer L. Anthony,Mark E. Davisarticular, those based on metallic nanoparticles embedded within a dielectric host matrix. However, this chapter is not meant as a complete literature survey and does not include all the immense existing literature. Instead, it can be taken as a practical handbook where the main ion-related strategi
brassy
发表于 2025-3-22 13:36:34
Seung-Woo Lee,Toyoki Kunitake damage formation in insulators and semiconductors due to nuThis book presents the method of ion beam modification of solids in realization, theory and applications in a comprehensive way. It provides a review of the physical basics of ion-solid interaction and on ion-beam induced structural modific
憎恶
发表于 2025-3-22 19:55:53
Punit Kohli,Charles R. Martinon model, the bond weakening (BW) model, the exciton self-trapping (STX) model, the concept of reduced electronic energy loss, the analytical thermal spike model, the IDEA (Ionization Diffusion-Explosion-Amorphization) model, the inelastic thermal spike model (i-TS) and to finish microscopic descrip
Cleave
发表于 2025-3-22 21:30:46
Tetsu Yonezawaon model, the bond weakening (BW) model, the exciton self-trapping (STX) model, the concept of reduced electronic energy loss, the analytical thermal spike model, the IDEA (Ionization Diffusion-Explosion-Amorphization) model, the inelastic thermal spike model (i-TS) and to finish microscopic descrip
饰带
发表于 2025-3-23 03:51:22
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委派
发表于 2025-3-23 05:45:48
Hideki Masuda,Kazuyuki Nishiow the parameters during ion implantation influence damage formation and to what extend the results for the various semiconductors can be generalised. It is shown that three groups of semiconductors can be identified. One group of materials exhibits a continuous transition towards amorphisation at su