jaunty
发表于 2025-3-26 23:37:00
Gianluca Oricchio,Sergio Lugaresi,Andrea Crovetto,Stefano Fontanay of a strong intervalley repopulation rate, required in , performed measurements in Ge at low temperatures. By choosing the heating field along a 〈100〉 direction, they investigated the electric response in the <I 〈10〉 direction for both the closed and open circuit conditions. In a certain regi
祝贺
发表于 2025-3-27 04:45:17
y of a strong intervalley repopulation rate, required in , performed measurements in Ge at low temperatures. By choosing the heating field along a 〈100〉 direction, they investigated the electric response in the <I 〈10〉 direction for both the closed and open circuit conditions. In a certain regi
相同
发表于 2025-3-27 08:21:57
mic balance state of the body on the axis of hot and cold for each individual and proposes the fact that deviation from this equilibrium is a predisposing factor for diseases. Such an approach helps practitioners to provide treatments tailored to the patient’s condition, not the disease. ..This book
绕着哥哥问
发表于 2025-3-27 13:16:04
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Fillet,Filet
发表于 2025-3-27 16:36:29
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Asperity
发表于 2025-3-27 18:02:11
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预示
发表于 2025-3-27 23:11:45
Gianluca Oricchio,Sergio Lugaresi,Andrea Crovetto,Stefano Fontana temperatures. The response of the nuclear medium to changes of its temperature and density is described by the nuclear matter equation of state which is subject of quantitative discussions in the energy regime of 1 GeV per nucleon. Many new results from experiments adressing these questions at the
Truculent
发表于 2025-3-28 05:09:28
Gianluca Oricchio,Sergio Lugaresi,Andrea Crovetto,Stefano Fontanahe drain. The “damage” is in the form of localized oxide charge trapping and/or interface trap generation, which gradually builds up and permanently changes the oxide-interface charge distribution ,. In this chapter, the hot-carrier injection mechanisms leading to oxide damage in MOSFET device
yohimbine
发表于 2025-3-28 08:03:56
Gianluca Oricchio,Sergio Lugaresi,Andrea Crovetto,Stefano Fontanahe drain. The “damage” is in the form of localized oxide charge trapping and/or interface trap generation, which gradually builds up and permanently changes the oxide-interface charge distribution ,. In this chapter, the hot-carrier injection mechanisms leading to oxide damage in MOSFET device
除草剂
发表于 2025-3-28 11:14:08
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