promote
发表于 2025-3-28 15:45:27
David Le Bretont—as mainly observed by .—also at the boundary between two semiconductors. These zones, the conductivity of which differs from the interior of the semiconductor, are generally situated on both sides of the boundary. Therefore, this layer is called “Doppelrandschicht” (double-barrier layer) in contra
CAJ
发表于 2025-3-28 21:55:50
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失误
发表于 2025-3-29 00:42:51
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Subjugate
发表于 2025-3-29 03:31:53
Ulrike Trapp,Monika Neuhäuser-Bertholdetween 1 and 10 mc/s, and in particular the alloyed transistor, today everywhere holds the field; higher frequencies up to 500 mc/s are attained with variants of the junction transistor such as the surface-barrier, the tetrode, the pnip, and the diffused transistor. The performance of the transistor
integral
发表于 2025-3-29 08:30:11
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Rotator-Cuff
发表于 2025-3-29 12:22:00
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粗鄙的人
发表于 2025-3-29 16:02:35
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急急忙忙
发表于 2025-3-29 21:18:39
Volker Rittneretween 1 and 10 mc/s, and in particular the alloyed transistor, today everywhere holds the field; higher frequencies up to 500 mc/s are attained with variants of the junction transistor such as the surface-barrier, the tetrode, the pnip, and the diffused transistor. The performance of the transistor
lobster
发表于 2025-3-30 02:36:25
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债务
发表于 2025-3-30 04:02:39
Heidrun Bründeletween 1 and 10 mc/s, and in particular the alloyed transistor, today everywhere holds the field; higher frequencies up to 500 mc/s are attained with variants of the junction transistor such as the surface-barrier, the tetrode, the pnip, and the diffused transistor. The performance of the transistor