LUDE 发表于 2025-3-30 11:51:55
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Martin Baumeister,Thomas Kohnens the essential scientific issues of metal/semiconductor interfaces and summarizes the evidence acquired and conclusions reached concerning the microscopic interface chemistry and Schottky barrier characteristics of transition-metal/Si and silicide/Si interfaces.人类 发表于 2025-3-30 17:02:33
Jens Bühren,Oliver K. Klaproth,Thomas Kohneng relaxation time phenomena, which are numerically observed are also interpreted. Finally, it is shown that the physical mechanism which is described in this model, could provide a new interpretation of the nonlinear transport properties of a conducting CDW in a d.c. field, like in the best quality形容词词尾 发表于 2025-3-30 22:12:23
Jens Bühren,Thomas Kohneng relaxation time phenomena, which are numerically observed are also interpreted. Finally, it is shown that the physical mechanism which is described in this model, could provide a new interpretation of the nonlinear transport properties of a conducting CDW in a d.c. field, like in the best qualityconformity 发表于 2025-3-31 04:06:03
Daniel Kook,Thomas Kohneng relaxation time phenomena, which are numerically observed are also interpreted. Finally, it is shown that the physical mechanism which is described in this model, could provide a new interpretation of the nonlinear transport properties of a conducting CDW in a d.c. field, like in the best qualityethnology 发表于 2025-3-31 06:48:19
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