作业
发表于 2025-3-21 17:02:08
书目名称Recent Advances in Science and Technology of Materials影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0822986<br><br> <br><br>书目名称Recent Advances in Science and Technology of Materials影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0822986<br><br> <br><br>书目名称Recent Advances in Science and Technology of Materials网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0822986<br><br> <br><br>书目名称Recent Advances in Science and Technology of Materials网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0822986<br><br> <br><br>书目名称Recent Advances in Science and Technology of Materials被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0822986<br><br> <br><br>书目名称Recent Advances in Science and Technology of Materials被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0822986<br><br> <br><br>书目名称Recent Advances in Science and Technology of Materials年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0822986<br><br> <br><br>书目名称Recent Advances in Science and Technology of Materials年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0822986<br><br> <br><br>书目名称Recent Advances in Science and Technology of Materials读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0822986<br><br> <br><br>书目名称Recent Advances in Science and Technology of Materials读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0822986<br><br> <br><br>
slow-wave-sleep
发表于 2025-3-21 21:10:11
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有常识
发表于 2025-3-22 02:15:10
https://doi.org/10.1007/978-1-4684-3021-9X-ray; crystal; defects; deformation; energy; glass; iron; material; materials; metals; semiconductors; stress
Detoxification
发表于 2025-3-22 06:42:34
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lobster
发表于 2025-3-22 10:32:52
The Capture of Electrons by Negatively Charged Impurity Atoms in N-Type Germanium the way in which the electron loses energy in its transition from the conduction band to a captured state. We have studied the dependence of capture rate on the external electric field at law temperature (20°K) for n-Ge containing gold centres as impurities.
Dawdle
发表于 2025-3-22 14:32:48
Effect of Heat Treatment on Electrical Properties and Structure of As-Te-Ge Chalcogenide Thin Films. This material was found to exhibit negative resistance with a memory and can be converted from high to low resistance state thermally by heating to a transition temperature or electrically by passing a transition current. The activation energy for conduction was found to be 0.36 and 0.3 eV in the high and low resistance states respectively.
coalition
发表于 2025-3-22 20:35:59
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繁殖
发表于 2025-3-23 01:00:20
Electrical Properties of Quenched SnO2 Films on Glass Substrateso be dependent upon the film forming compounds the film growth rate and temperature the hydrolytic reaction intrinsic and thermal stress. The thermal stress is responsible for the observed difference in conductivity on glass substrates with different α-values.
inclusive
发表于 2025-3-23 03:38:58
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吞没
发表于 2025-3-23 06:08:39
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