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P. L. Knight,V. Bužekical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense elecBRACE 发表于 2025-3-22 08:19:11
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s under different physical conditions, in the presence of quantizing magnetic field and external photo excitation and also under strong electric field altering profoundly the basic band structures which, in turn, generate pin-pointed knowledge regarding EEM in various semiconductors and their nanostUTTER 发表于 2025-3-22 19:40:14
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