指派 发表于 2025-3-25 06:12:33

Semiconductor Quantum Dot-Sensitized Solar Cells Employing TiO2 Nanostructured Photoanodes with Difogies, i.e., nanoparticles, nanotubes, and inverse opals. The optical absorption, photoelectrochemical, and photovoltaic properties of the QDSCs were characterized and the dependences of these properties on the QD deposition time and the TiO. nanostructure are discussed. To improve the photovoltaic

Carcinogen 发表于 2025-3-25 08:48:56

Optoelectronic Applications of Colloidal Quantum Dots,vices, and device concepts have been proposed and studied. Many of these device concepts build on traditional optoelectronic device concepts. Increasingly, many new optoelectronic device concepts have been based on the use of biomolecule QD complexes. In this chapter, both types of structures are di

lymphedema 发表于 2025-3-25 14:38:34

Optically Injected Single-Mode Quantum Dot Lasers,(SN) and Hopf bifurcations forming the locking boundaries are examined and are shown to reproduce the observed experimental stability features. The generation of the phase-locked bistability is also explained via a combination of these bifurcations.

厨师 发表于 2025-3-25 17:14:29

Exotic Behavior in Quantum Dot Mode-Locked Lasers: Dark Pulses and Bistability,between these two modes within just a few cavity round trips. This device can be made to switch between two stable wavelengths separated by just 7 nm up to over 40 nm with a contrast ratio of over 40 dB.

谦卑 发表于 2025-3-25 23:19:10

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集聚成团 发表于 2025-3-26 03:56:41

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噱头 发表于 2025-3-26 07:07:58

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宣誓书 发表于 2025-3-26 09:10:33

Post-Growth Intermixing of GaAs Based Quantum Dot Devices, will then go on to describe active intermixed QD devices including both lasers and broadband devices such as super luminescent diodes and amplifiers, and conclude with our latest results on selective area intermixed devices.

Supplement 发表于 2025-3-26 12:55:06

Nonlinear Optics and Saturation Behavior of Quantum Dot Samples Under Continuous Wave Driving,f-lensing are discussed. Experimental work on saturation characteristic of InGa/GaAs quantum dots close to the telecommunication O-band (1240–1280 nm) and of InAlAs/GaAlAs QD at 780 nm is described and the first demonstration of the cw saturation of absorption in room temperature QD samples is discussed in detail.

organism 发表于 2025-3-26 16:58:34

Optoelectronic Applications of Colloidal Quantum Dots,, light-emitting diodes (LEDs), photovoltaic devices, and solar cells, but new devices concepts such a biomolecule-based molecular sensors possible. This chapter highlights a number of such novel QD-based devices and device concepts.
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查看完整版本: Titlebook: Quantum Dot Devices; Zhiming M. Wang Book 2012 Springer Science+Business Media New York 2012 Colloidal quantum dots, optoelectronic applli