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狂热文化
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碳水化合物
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conduct
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放纵
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J-P. Antoine,S. Twareque Ali,A. Odzijewiczexperimental works we performed on III-V MOSFETs using ex-situ atomic-layer-deposited high-k dielectrics and also reported works in the literature using in-situ molecular beam expitaxy grown Ga.O.(Gd.O.) as gate dielectric. The results show that physics related to III-V substrates is as important as