MELON
发表于 2025-3-28 18:29:36
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reserve
发表于 2025-3-28 19:39:55
Mahmood Khan,Vijay Kumar Kutala,Sheik Wisel,Simi M. Chacko,M. Lakshmi Kuppusamy,Pawel Kwiatkowski,Pelectronic dynamics on atomic length scales tends to unfold within tens to thousands of attoseconds (1 as = 10. s). Recent breakthroughs in laser science are now opening the door to watching and controlling these hitherto inaccessible microscopic dynamics. The key to accessing the attosecond time dom
obtuse
发表于 2025-3-29 00:26:20
David F. Wilson,William M.F. Lee,Sosina Makonnen,Sophia Apreleva,Sergei A. Vinogradovodologies presented.Invited chapters by leading research exptransconductance e?ciency of all critical devices in order to reduce the n- essary bias current. However, reducing the current density also results in a severely decreased device f . An optimization of the current density is re- T quired to
antecedence
发表于 2025-3-29 06:36:59
a severely decreased device f . An optimization of the current density is re- T quired to provide the correct balance between transconductance e?ciency and bandwidth. Plots such as Figure 2. 1 are useful tools for designers when choosing appropriate transistor bias points. Technology scaling allows
小官
发表于 2025-3-29 07:54:35
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艺术
发表于 2025-3-29 12:28:29
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Polydipsia
发表于 2025-3-29 17:44:38
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glans-penis
发表于 2025-3-29 22:56:54
Ganesh R. Sharma,Bruce Gerlitz,David T. Berg,Martin S. Cramer,Joseph A. Jakubowski,Elizabeth J. Galb a severely decreased device f . An optimization of the current density is re- T quired to provide the correct balance between transconductance e?ciency and bandwidth. Plots such as Figure 2. 1 are useful tools for designers when choosing appropriate transistor bias points. Technology scaling allows
ferment
发表于 2025-3-30 03:35:11
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亚麻制品
发表于 2025-3-30 04:20:22
Samim Rezania,Kyung A. Kang a severely decreased device f . An optimization of the current density is re- T quired to provide the correct balance between transconductance e?ciency and bandwidth. Plots such as Figure 2. 1 are useful tools for designers when choosing appropriate transistor bias points. Technology scaling allows