Employee
发表于 2025-3-25 07:02:49
Roberto Festas of II–VI materials and their alloys. The renewed interest in the family of II–VI semiconductors is thus directly related to their successful epitaxial growth by molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), metal–organic chemical vapour deposition (MOCVD), and metal–organic molecular b
寻找
发表于 2025-3-25 10:01:34
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inhibit
发表于 2025-3-25 13:53:56
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CLOWN
发表于 2025-3-25 19:20:50
Roberto Festas of II–VI materials and their alloys. The renewed interest in the family of II–VI semiconductors is thus directly related to their successful epitaxial growth by molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), metal–organic chemical vapour deposition (MOCVD), and metal–organic molecular b
JOG
发表于 2025-3-25 21:01:27
e blue and green spectral ranges. Difficulty in obtaining both p-type and n-type conductive forms of these materials, however, has prevented progress towards the realization of such opto-electronic devices. In the past decade, new low-temperature epitaxial growth techniques represented by molecular
Fantasy
发表于 2025-3-26 03:13:14
Roberto Festarpolation and intermediate spaces provided the main tool for describing function spaces and their approximation properties. The Calderon identities allow one to give integral representations of many natural operators by using simple pieces of such operators, which are more suited for analysis. These
aggravate
发表于 2025-3-26 04:54:32
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MERIT
发表于 2025-3-26 11:42:05
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不可知论
发表于 2025-3-26 12:52:56
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跑过
发表于 2025-3-26 18:13:41
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