弹药
发表于 2025-3-26 23:42:40
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Stable-Angina
发表于 2025-3-27 04:24:06
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Eructation
发表于 2025-3-27 07:45:15
Towards High-Order Diffraction Suppression Using Two-Dimensional Quasi-Periodic Gratings,ies in two perpendicular directions. However, conventional 2D diffraction gratings often suffer from wavelength overlapping caused by high-order diffractions, and producing diffraction gratings with nanometer feature size still remains a challenge. In recent years, 2D quasi-periodic diffraction grat
cravat
发表于 2025-3-27 10:37:31
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Torrid
发表于 2025-3-27 16:42:19
Polarization-Independent Tunable Spectral Filter by the Use of Liquid Crystal,al devices, however, usually require a polarizer that halves light intensity. This polarization dependence is unfavorable particularly in the long-wavelength infrared region in which neither efficient polarizers nor strong light sources is available due to opaqueness of ordinary optical materials. P
debble
发表于 2025-3-27 20:32:28
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大气层
发表于 2025-3-27 23:17:42
Advances in Fs-Laser Micromachining Towards the Development of Optofluidic Devices, reviewed. This technology can be applied to a wide range of materials (glasses, crystals, polymers) and relies on a non-linear absorption process that leads to a permanent alteration of the material structure. This modification can induce, for instance, a smooth variation of the refractive index or
laceration
发表于 2025-3-28 04:44:08
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Atmosphere
发表于 2025-3-28 08:32:07
High Power Continuous-Wave Er-doped Fiber Lasers,ary applications. There are four main type of lasers allowing to generate high power radiation at this spectral range: Er/Yb-co doped fiber lasers, Yb-free Er-doped fiber lasers cladding-pumped at 980 nm, Er-doped fiber lasers core-pumped by Raman lasers at 1480 nm, and Er-doped fiber laser in-band
Paraplegia
发表于 2025-3-28 13:32:31
Characterization of the Charge Transfer in an Enhanced Pinned Photodiode with a Collection Gate,inned photodiode which was developed by the Fraunhofer IMS in Duisburg, Germany for Time-of-Flight distance measurement applications is taken as the starting point. The sensor which was fabricated in a standard 0.35 . CMOS process and the optimized design introduces a second gate, the Collection Gat