相容
发表于 2025-3-26 22:28:00
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ALB
发表于 2025-3-27 02:16:08
Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Modeexperimental works we performed on III-V MOSFETs using ex-situ atomic-layer-deposited high-k dielectrics and also reported works in the literature using in-situ molecular beam expitaxy grown Ga.O.(Gd.O.) as gate dielectric. The results show that physics related to III-V substrates is as important as
Alopecia-Areata
发表于 2025-3-27 05:47:47
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遗忘
发表于 2025-3-27 12:53:06
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冲突
发表于 2025-3-27 16:56:24
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dictator
发表于 2025-3-27 19:24:57
r reprint of a very popular hardcover edition, a revised version of the first edition, originally published by Prentice Hall in 1962 and regarded as a classic in its field. In some places, newer research results, e.g. results on weak regular splittings, have been incorporated in the revision, and in