Feedback
发表于 2025-3-23 11:12:09
on in future.Provides details of step-by-step foundation of .The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berk
A保存的
发表于 2025-3-23 16:02:44
Book 2014S inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and di
乳汁
发表于 2025-3-23 20:48:31
http://reply.papertrans.cn/67/6685/668470/668470_13.png
无力更进
发表于 2025-3-24 01:19:36
Quantum Dot Gate Field-Effect Transistor: Device Structures,.....
讨厌
发表于 2025-3-24 04:22:00
http://reply.papertrans.cn/67/6685/668470/668470_15.png
Fecundity
发表于 2025-3-24 08:57:26
Quantum Dot Gate Field-Effect Transistors: Theory and Device Modeling,.
Ostrich
发表于 2025-3-24 13:57:39
http://reply.papertrans.cn/67/6685/668470/668470_17.png
Proclaim
发表于 2025-3-24 15:53:14
http://reply.papertrans.cn/67/6685/668470/668470_18.png
cardiopulmonary
发表于 2025-3-24 21:36:02
http://reply.papertrans.cn/67/6685/668470/668470_19.png
indignant
发表于 2025-3-25 00:18:02
http://reply.papertrans.cn/67/6685/668470/668470_20.png