encroach
发表于 2025-3-21 18:50:39
书目名称Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0667427<br><br> <br><br>书目名称Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0667427<br><br> <br><br>书目名称Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0667427<br><br> <br><br>书目名称Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0667427<br><br> <br><br>书目名称Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0667427<br><br> <br><br>书目名称Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0667427<br><br> <br><br>书目名称Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0667427<br><br> <br><br>书目名称Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0667427<br><br> <br><br>书目名称Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0667427<br><br> <br><br>书目名称Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0667427<br><br> <br><br>
性满足
发表于 2025-3-21 21:36:09
Current Filamentation in P-I-N Diodes: Experimental Observations and an Equivalent Circuit Model,is demonstrated that a model based on an equivalent circuit can describe the occurrence of current filaments and some of their dynamic properties. A comparison between theoretical predictions and experimental data is carried out showing excellent agreement.
认为
发表于 2025-3-22 04:27:19
Conference proceedings 19951st editionheir stability and bifurcation behaviour. A point of special interest is the evolution of dynamic structures and the investigation of more complex structures arising from interactions between these structures. Possible applications of nonlinear effects and self-organization phenomena with respect to signal processing are discussed.
GOAD
发表于 2025-3-22 05:23:53
Structure Formation in Charge Density Wave Systems,elf-organized criticality and switching oscillations have been found near the threshold electrical field. The observed complex behavior in the time domain makes it plausible to expect charge density wave systems also to organize in space.
concentrate
发表于 2025-3-22 08:53:52
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昏睡中
发表于 2025-3-22 16:44:37
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alliance
发表于 2025-3-22 20:32:33
omplex structures arising from interactions between these structures. Possible applications of nonlinear effects and self-organization phenomena with respect to signal processing are discussed.978-3-642-79508-4978-3-642-79506-0
充满人
发表于 2025-3-22 22:04:04
V. Novák,W. Prettld use technology not to alienate oppressed people, but for the inclusion of alienated people. Technology must be utilized for designing a new society which can be accessed and used by all people regardless of age, size, ability, or disability. It is important for better technology to encounter oppressed people as “thee” and hear “thy” voice.
Arresting
发表于 2025-3-23 03:35:47
Nonlinear Dynamics and Pattern Formation in Semiconductors and DevicesProceedings of a Sym
patriarch
发表于 2025-3-23 06:16:06
Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices978-3-642-79506-0