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Four-Terminal Nondestructive Electrical and Galvanomagnetic Measurements,esistivity. Modern technological processes, particularly those concerned with manufacturing of semiconductor devices and integrated circuits require that such measurements be made not only of the spatial average of macroscopic specimens but also of localized microscopic fluctuations in their resistivity.
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Optical Characterization of Semiconductors,dex of refraction ñ = (n + ik). Later, we will determine the origin of n and k in a semiconductor so that we may characterize it in terms of free-carrier density, mobility, donor and acceptor densities, alloy homogeneity, etc.
PAD416
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NATO Science Series B:http://image.papertrans.cn/n/image/667232.jpg
杀菌剂
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978-1-4757-1354-1Springer Science+Business Media New York 1979
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Nondestructive Evaluation of Semiconductor Materials and Devices978-1-4757-1352-7Series ISSN 0258-1221
Ventilator
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Book 1979olano in Frascati, Italy. A total of 80 attendees and lecturers participated in the program which covered many of the important topics in this field. The subject matter was divided to emphasize the following different types of problems: electrical measurements; acoustic measurements; scanning techni
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发表于 2025-3-26 11:18:52
0258-1221 Villa Tuscolano in Frascati, Italy. A total of 80 attendees and lecturers participated in the program which covered many of the important topics in this field. The subject matter was divided to emphasize the following different types of problems: electrical measurements; acoustic measurements; scann
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