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发表于 2025-3-21 19:23:11
书目名称Non-logic Devices in Logic Processes影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0667125<br><br> <br><br>书目名称Non-logic Devices in Logic Processes影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0667125<br><br> <br><br>书目名称Non-logic Devices in Logic Processes网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0667125<br><br> <br><br>书目名称Non-logic Devices in Logic Processes网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0667125<br><br> <br><br>书目名称Non-logic Devices in Logic Processes被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0667125<br><br> <br><br>书目名称Non-logic Devices in Logic Processes被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0667125<br><br> <br><br>书目名称Non-logic Devices in Logic Processes年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0667125<br><br> <br><br>书目名称Non-logic Devices in Logic Processes年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0667125<br><br> <br><br>书目名称Non-logic Devices in Logic Processes读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0667125<br><br> <br><br>书目名称Non-logic Devices in Logic Processes读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0667125<br><br> <br><br>
赌博
发表于 2025-3-21 22:59:38
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倒转
发表于 2025-3-22 01:38:19
Yanjun Ma,Edwin Kanw of the large amount of data available some of the information is given on the CD ROM only. Parameters for low-lying nuclear levels of many nuclei were previously published by Landolt-Börnstein in Volume I/18, and for nuclear unbound states in Volumes I/16 and I/19A..978-3-540-33961-8Series ISSN 1615-1844 Series E-ISSN 1616-9522
Flirtatious
发表于 2025-3-22 06:35:27
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并排上下
发表于 2025-3-22 11:51:48
https://doi.org/10.1007/978-3-319-48339-9Device Physics; Logic CMOS; MOSFETs; Semiconductor Device Physics; Semiconductor Devices; Semiconductor F
庇护
发表于 2025-3-22 15:49:06
Bipolar Transistors in Logic CMOS Processestensively discussed, mostly in the context of avoiding the latch-up risk for CMOS ICs. We here focus on a couple of applications, especially in the voltage reference circuits, of the BJTs. We also discuss a special punchthrough transistor that can be obtained from the CMOS process.
ODIUM
发表于 2025-3-22 19:05:01
Diodes in Logic CMOS Processesive, the polysilicon resistor. In particular, the different temperature coefficients of resistivity (TCR) of p and n polysilicon make it possible to obtain a resistor that is temperature independent. Then we showed several examples of making Schottky diodes in logic processes and discussed their properties and applications.
MIRE
发表于 2025-3-22 23:46:28
Logic Nonvolatile Memoryive an overview of the embedded NVM design using logic CMOS process. We review the basic memory cell design, the programming and erasing methods, and array structure of embedded NVMs. High-voltage circuits, including charge pumps and high-voltage switches, are also discussed. Reliability issues associated with embedded NVMs are introduced.
发展
发表于 2025-3-23 03:43:10
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Fissure
发表于 2025-3-23 07:35:04
978-3-319-83916-5Springer International Publishing AG 2017