opinionated
发表于 2025-3-26 23:30:00
Effect of Surface Dopant Concentration,The effectiveness of Al.O. surface passivation depends not only on the processing history of the film, but also on the properties of the semiconductor surface on which it is deposited. In this chapter we examine the influence of surface dopant type and concentration on the recombination rate at Al.O.-passivated surfaces.
吞下
发表于 2025-3-27 04:12:32
,Effect of Surface Orientation and Morphology,Besides the dopant concentration, the major surface properties which may influence passivation quality are crystalline orientation and morphology.
会议
发表于 2025-3-27 06:37:11
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割公牛膨胀
发表于 2025-3-27 11:12:39
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venous-leak
发表于 2025-3-27 14:40:33
Springer Theseshttp://image.papertrans.cn/n/image/665644.jpg
有常识
发表于 2025-3-27 19:50:17
https://doi.org/10.1007/978-3-319-32521-7Surface Recombination Theory; Passivation Performance; Passivating Dielectrics; Deposition of Al2O3; Atm
garrulous
发表于 2025-3-27 22:32:45
2190-5053 ough a comprehensivestudy, which moves from the particular, the case of aluminium oxide on silicon,to the general, the physics of surface recombination, and is able to connecttheory with practice, highlighting relevant commercial applications...978-3-319-81307-3978-3-319-32521-7Series ISSN 2190-5053 Series E-ISSN 2190-5061
系列
发表于 2025-3-28 04:21:46
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贵族
发表于 2025-3-28 08:17:27
Book 2016physics of Al2O3 as apassivating dielectric for silicon surfaces. This is accomplished through a comprehensivestudy, which moves from the particular, the case of aluminium oxide on silicon,to the general, the physics of surface recombination, and is able to connecttheory with practice, highlighting relevant commercial applications...
背书
发表于 2025-3-28 11:18:32
Book 2016ndustrially compatibledeposition method for Al2O3, enabling its application to commercial solar cells.One of the main focus is on the analysis of the physics of Al2O3 as apassivating dielectric for silicon surfaces. This is accomplished through a comprehensivestudy, which moves from the particular,