negation 发表于 2025-3-21 16:34:19
书目名称New Developments in Semiconductor Physics影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0665038<br><br> <br><br>书目名称New Developments in Semiconductor Physics影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0665038<br><br> <br><br>书目名称New Developments in Semiconductor Physics网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0665038<br><br> <br><br>书目名称New Developments in Semiconductor Physics网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0665038<br><br> <br><br>书目名称New Developments in Semiconductor Physics被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0665038<br><br> <br><br>书目名称New Developments in Semiconductor Physics被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0665038<br><br> <br><br>书目名称New Developments in Semiconductor Physics年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0665038<br><br> <br><br>书目名称New Developments in Semiconductor Physics年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0665038<br><br> <br><br>书目名称New Developments in Semiconductor Physics读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0665038<br><br> <br><br>书目名称New Developments in Semiconductor Physics读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0665038<br><br> <br><br>防御 发表于 2025-3-21 23:21:53
Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb,increased by an uniaxial stress of some kbar. While the zero-stress results were described by a quantum transport theory including the effect of the nonparabolicity of the conduction band on ionized impurity scattering consistently, this theory fails to reproduce the stress dependence of the conductivity tensor.Vertebra 发表于 2025-3-22 01:24:44
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Optically detected magnetic resonance studies of semiconductors,ported and details of deep acceptor centres associated with vacancies in II–VI compounds are given. A recent investigation of oxygen in GaP confirms the existence of the two electron trap and studies of amorphous silicon show that the ODMR technique can be used to study deep centres in both crystalline and amorphous semiconductors.BLAND 发表于 2025-3-22 10:53:52
Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide atσ. = 9.10. cm.) which anneals between 200 K and 300 K. We have also applied the new method DLOS (Deep Level Optical Spectroscopy) to the determination of the optical capture cross-section σ .(hη) of E. to determine the lattice relaxation effect of this centre.背心 发表于 2025-3-22 15:14:36
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http://reply.papertrans.cn/67/6651/665038/665038_8.pngHerbivorous 发表于 2025-3-23 05:11:41
B. C. Cavenett die beobachtete Merkmalsvarianz zwischen den Individuen weitgehend auf Differenzen beruht, die genetischer Natur sind, kann durch Züchtung diese Varianz ausgenützt werden, das heißt, wird es möglich, auf Grund bestimmter Züchtungsverfahren mehrheitlich diejenigen Individuen zur Zucht auszuwählen, dSolace 发表于 2025-3-23 09:05:20
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