Filibuster
发表于 2025-3-28 18:26:53
Neutron Transmutation Doping of p-Type Czochralski-Grown Gallium Arsenidetechniques and found to contain three different acceptor levels with a total acceptor concentration of 4 to 6xlO./cm. and total initial compensating donor concentration of 1 to 2xl0./cm...By following individual irradiated samples through a series of heat treatments, we have studied the effects of r
壮观的游行
发表于 2025-3-28 21:18:15
Neutron Transmutation Doped Silicon for Power Semiconductor Devicesed out will be described. These experiments were crucial to allaying initial concerns regarding the quality of neutron transmutation doped silicon and were instrumental in achieving the present widespread use of this process for fabrication of starting material for the power-device industry..The yea
新娘
发表于 2025-3-29 00:43:58
Book 1984e Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four paper
出血
发表于 2025-3-29 03:10:28
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callous
发表于 2025-3-29 09:49:30
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疏远天际
发表于 2025-3-29 14:12:40
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组装
发表于 2025-3-29 19:09:57
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GUILE
发表于 2025-3-29 20:46:26
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hedonic
发表于 2025-3-30 01:55:58
Neutron Transmutation Doping of Semiconductor Materials978-1-4613-2695-3
钢盔
发表于 2025-3-30 05:19:31
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