变异
发表于 2025-3-30 08:49:08
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SMART
发表于 2025-3-30 15:08:37
Armando Perrottarque (STT)-MRAM has been described. Here, we have also addressed the issue of perpendicular STT-MRAM, application of STT-MRAM, the latest application of STT-MRAM, etc. We have carried out a discussion on spintronics sensors that include .. Some very intriguing topics on Spin FET, Race Track Memory,
遵循的规范
发表于 2025-3-30 18:27:17
H. Evren Boran,Hayrunnisa Bolay,H. Andreas R. Gantenbein,Heiko Pohlransistor-based paradigm. Recent research activities include implementation and involvement of Spintronics in the field of Computing and .. Therefore, understanding the science and technology of Spintronics has become imperative for the students of basic science and engineering disciplines.
Offbeat
发表于 2025-3-30 21:56:43
Marina de Tommaso,Massimiliano Valeriani,Mark Obermanmputing and discusses which aspects and features regarding the emerging technology of nanomagnetism and spintronics make it interesting for neuromorphic/non-von Neumann implementations. This chapter also provides information on which subsequent chapter of the book covers which aspect in more detail.
Psa617
发表于 2025-3-31 01:10:00
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温和女孩
发表于 2025-3-31 09:05:41
Gianluca Coppola,Cherubino Di Lorenzo,Filippo Maria Santorellimputing and discusses which aspects and features regarding the emerging technology of nanomagnetism and spintronics make it interesting for neuromorphic/non-von Neumann implementations. This chapter also provides information on which subsequent chapter of the book covers which aspect in more detail.
aspersion
发表于 2025-3-31 09:45:14
Gianluca Coppola,Andrea Antalmputing and discusses which aspects and features regarding the emerging technology of nanomagnetism and spintronics make it interesting for neuromorphic/non-von Neumann implementations. This chapter also provides information on which subsequent chapter of the book covers which aspect in more detail.
显赫的人
发表于 2025-3-31 13:31:34
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wreathe
发表于 2025-3-31 18:25:55
Massimiliano Valeriani,Parisa Gazeranilatile devices is seen as a promising solution to reduce power consumption, improve reliability and offer new functionalities. Several technologies are intensively investigated like Phase Change Random Access Memory (PCRAM), Ferroelectric RAM (FeRAM), RedoxRAM (ReRAM) and Magnetic RAM (MRAM). In its
阴谋
发表于 2025-4-1 01:24:00
2197-652X ic plasticity to the patient’s bedside...This book belongs to the Headache Series endorsed by the European Headache Federation. Written by internationally recognized experts in their respective 978-3-030-56540-4978-3-030-56538-1Series ISSN 2197-652X Series E-ISSN 2197-6538