忙碌
发表于 2025-3-23 11:05:03
Gerd Petersography materials, catalysts and photonic materials (reviewed by Iler 1979). Silica may be produced at high temperature, via aqueous processing or by largely non-aqueous routes such as the low-temperature sol-gel process (reviewed in Brinker and Scherrer 1990; Hench and West 1990).Whatever the event
definition
发表于 2025-3-23 17:10:58
H. Jacobduction of electronic materials. There is a multitude of physical phenomena in the sublimation growth process. Only a partial modeling of the whole process can be made even by the most ambitious researcher. The main objective is to reach an accurate understanding of heat and mass transfer. It could
卜闻
发表于 2025-3-23 21:47:04
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巨头
发表于 2025-3-23 23:17:09
W. Scholz,H. Hageraterial growth and homoepitaxial growth. Homoepitaxial growth of SiC by vapor phase epitaxy (VPE) was started in the mid 1980th due to unsatisfactory results in epilayer quality by growth techniques such as liquid phase epitaxy and close space sublimation. The first VPE-reactors for SiC were former
JEER
发表于 2025-3-24 04:15:25
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LINES
发表于 2025-3-24 07:25:04
B. Ostertageteorites, but in very small amounts and is not in a useable state as an industrial material. For industrial require ments, large amounts of silicon carbide must be synthesized by solid state reactions at high temperatures. Silicon carbide has been used for grinding and as an abrasive material sinc
GRAIN
发表于 2025-3-24 11:25:06
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设施
发表于 2025-3-24 16:27:43
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canonical
发表于 2025-3-24 22:17:28
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与野兽博斗者
发表于 2025-3-25 01:06:40
Gerd Petersrovides a comprehensive collection of SiC technologies inforSilicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system compo