STANT
发表于 2025-3-26 23:26:25
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国家明智
发表于 2025-3-27 01:09:29
2522-8404 ways on the other. .Chapter 5 is available open access under a Creative Commons Attribution 4.0 International License via link.springer.com..978-3-030-89527-3978-3-030-89525-9Series ISSN 2522-8404 Series E-ISSN 2522-8412
Intact
发表于 2025-3-27 06:12:27
Niki Frantzeskaki,Israa H. Mahmoud,Eugenio Morellotheoretical approach is therefore used and special cases essential to understanding these important concept are presented..978-94-017-7916-6978-94-017-8768-0Series ISSN 1876-1100 Series E-ISSN 1876-1119
Arb853
发表于 2025-3-27 12:23:02
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1分开
发表于 2025-3-27 15:32:57
of the complex band structure of the respective semiconductor. Tailing of electron wavefunctions means charge transfer across the interface so that generally a dipole layer will exist at interfaces. The barrier heights in metal-semiconductor contacts as well as the band-edge discontinuities at semic
弓箭
发表于 2025-3-27 21:49:29
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pacifist
发表于 2025-3-27 23:15:14
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