Simulate 发表于 2025-3-26 23:13:59

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消音器 发表于 2025-3-27 03:19:23

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Lime石灰 发表于 2025-3-27 07:34:04

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Hallmark 发表于 2025-3-27 10:01:48

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疏远天际 发表于 2025-3-27 13:58:36

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motivate 发表于 2025-3-27 19:25:37

Metal-Oxide Transistors and Calculation of the Trap Density of States in the Band Gap of Semiconducarge carrier traps inside the materials. Hence, it is a scientific challenge for researchers to explore the microscopic origin of these traps. In this chapter, the density of localized states in the band gap of n-type materials such as zinc tin oxide (ZTO) and organic .,.′-dioctyl-3,4,9,10-perylened

Reclaim 发表于 2025-3-28 00:40:52

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Intuitive 发表于 2025-3-28 02:48:09

2524-5384 etail, to aid readers interested in the structure–property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material 978-981-15-3316-7978-981-15-3314-3Series ISSN 2524-5384 Series E-ISSN 2524-5392

厨师 发表于 2025-3-28 09:57:05

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conifer 发表于 2025-3-28 11:03:54

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查看完整版本: Titlebook: Nanostructured Metal Oxides and Devices; Optical and Electric M. K. Jayaraj Book 2020 Springer Nature Singapore Pte Ltd. 2020 Metal Oxides.