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Metal-Oxide Transistors and Calculation of the Trap Density of States in the Band Gap of Semiconducarge carrier traps inside the materials. Hence, it is a scientific challenge for researchers to explore the microscopic origin of these traps. In this chapter, the density of localized states in the band gap of n-type materials such as zinc tin oxide (ZTO) and organic .,.′-dioctyl-3,4,9,10-perylenedReclaim 发表于 2025-3-28 00:40:52
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2524-5384 etail, to aid readers interested in the structure–property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material 978-981-15-3316-7978-981-15-3314-3Series ISSN 2524-5384 Series E-ISSN 2524-5392厨师 发表于 2025-3-28 09:57:05
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