SPURN
发表于 2025-3-28 17:15:49
Resistive Switching Models by Ion Migration in Metal Oxides, In bipolar resistive switching, the resistance of a conductive filament (CF) is controlled through the application of electrical stimuli, and the conductive state of the nanoscaled CF can be used to encode the value of the logical bit in a nonvolatile memory. To investigate the scaling opportunitie