nocturia 发表于 2025-3-25 06:25:02
Nanoscale Pattern Transfer by Deposition,rticular are difficult to etch by dry etching process. Though wet acids can etch metals, the isotropic nature of wet etch means it is difficult to obtain high resolution as well as high aspect ratio metallic structures. Pure physical sputtering such as the ion milling introduced in Chap. . is too slscoliosis 发表于 2025-3-25 08:30:19
Indirect Nanofabrication, defined directly by a lithographic means, whether through a mask (optical lithography or charged particle projection lithography) or through direct patterning (electron beam, focused ion beam, laser beam, scanning probes, inkjet printing) or with a mold (nanoimprint, microcontact printing). The strDri727 发表于 2025-3-25 12:31:58
Nanofabrication by Self-Assembly,lways involve one way or another lithographic patterning and pattern transfer. They are still the same as, or not too much different from, the technologies for manufacturing integrated circuits, which originated nearly 55 years ago in 1961 when the first patent on planar integrated circuit was grant训诫 发表于 2025-3-25 16:50:46
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Book 20172nd edition and reference, this book introduces readers to all of the developed technologies that are capable of making structures below 100nm. The principle of each technology is introduced and illustrated with minimum mathematics involved. Also analyzed are the capabilities of each technology in making sub-1GLEAN 发表于 2025-3-26 07:08:53
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