来这真柔软
发表于 2025-3-25 07:12:14
Design and Verification of Memory Controller with Host Wishbone Interface, digital circuit which manages the flow of data to and fro from the processor to the memory. Instead of processor handling all the read and write operations into the memory, it allocates its work to memory controller so that processor can do some other work during the same time. This in turn leads t
Proclaim
发表于 2025-3-25 10:42:59
High Performance Trench Gate Power MOSFET of Indium Phosphide,e-based trench MOSFET shows 36% improvement in breakdown voltage, 75% reduction in ON resistance and 400% improvement in peak transconductance as compared to the equivalent Si trench MOSFET of ~50 V class.
轨道
发表于 2025-3-25 15:30:48
,28 nm FD-SOI SRAM Design Using Read Stable Bit Cell Architecture,ime and read stability as compared to the conventional 6T SRAM. Write 1 operation achieves a rise of 16%, while write 0 and read 1 are better than 6T by 70 and 90%, respectively. The design was implemented on 28 nm FD-SOI platform. .: The proposed design has the better read stability as compared to the conventional 6T SRAM bit cell design.
进取心
发表于 2025-3-25 19:36:27
Design and Verification of Memory Controller with Host Wishbone Interface,mic random access memory (SDRAM), and synchronous chip select device. It also deals with the verification and functional coverage of the controller. The design part has been done using Xilinx ISE tool, and the verification part has been done using Mentor Graphics Questa Sim 10.0b.
叙述
发表于 2025-3-25 20:08:46
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小争吵
发表于 2025-3-26 03:27:11
Conference proceedings 2018actitioners and students working in the core areas of functional electronics nanomaterials, nanocomposites for energy application, sensing and high strength materials and simulation of novel device design structures for ultra-low power applications. .
蛰伏
发表于 2025-3-26 05:26:02
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multiply
发表于 2025-3-26 09:33:47
Design of Current-Mode CNTFET Transceiver for Bundled Carbon Nanotube Interconnect, metal oxide semiconductor field-effect transistor counterpart. Simulation results justify that the proposed transceiver exhibits lesser delay by the factor of 1000 and 100 times lower power dissipation compared to metal oxide semiconductor field-effect transistor-based transceiver.
evince
发表于 2025-3-26 15:18:19
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COKE
发表于 2025-3-26 20:39:42
,A Current-Mode DC–DC Boost Converter with Fast Transient and On-Chip Current-Sensing Technique,quency with output ripple voltage of 21 mV by using 4.7 µF off-chip capacitor and 55 µH off-chip inductor. .: Design of converter in current-mode control with high accurate current-sensing technique increases the controllability on PWM signal. Modified OTA design helps in the fast settling of the converter.