门牙 发表于 2025-3-21 19:28:22

书目名称Modeling of Electrical Overstress in Integrated Circuits影响因子(影响力)<br>        http://impactfactor.cn/2024/if/?ISSN=BK0636238<br><br>        <br><br>书目名称Modeling of Electrical Overstress in Integrated Circuits影响因子(影响力)学科排名<br>        http://impactfactor.cn/2024/ifr/?ISSN=BK0636238<br><br>        <br><br>书目名称Modeling of Electrical Overstress in Integrated Circuits网络公开度<br>        http://impactfactor.cn/2024/at/?ISSN=BK0636238<br><br>        <br><br>书目名称Modeling of Electrical Overstress in Integrated Circuits网络公开度学科排名<br>        http://impactfactor.cn/2024/atr/?ISSN=BK0636238<br><br>        <br><br>书目名称Modeling of Electrical Overstress in Integrated Circuits被引频次<br>        http://impactfactor.cn/2024/tc/?ISSN=BK0636238<br><br>        <br><br>书目名称Modeling of Electrical Overstress in Integrated Circuits被引频次学科排名<br>        http://impactfactor.cn/2024/tcr/?ISSN=BK0636238<br><br>        <br><br>书目名称Modeling of Electrical Overstress in Integrated Circuits年度引用<br>        http://impactfactor.cn/2024/ii/?ISSN=BK0636238<br><br>        <br><br>书目名称Modeling of Electrical Overstress in Integrated Circuits年度引用学科排名<br>        http://impactfactor.cn/2024/iir/?ISSN=BK0636238<br><br>        <br><br>书目名称Modeling of Electrical Overstress in Integrated Circuits读者反馈<br>        http://impactfactor.cn/2024/5y/?ISSN=BK0636238<br><br>        <br><br>书目名称Modeling of Electrical Overstress in Integrated Circuits读者反馈学科排名<br>        http://impactfactor.cn/2024/5yr/?ISSN=BK0636238<br><br>        <br><br>

adhesive 发表于 2025-3-21 20:57:59

http://reply.papertrans.cn/64/6363/636238/636238_2.png

angina-pectoris 发表于 2025-3-22 02:48:51

http://reply.papertrans.cn/64/6363/636238/636238_3.png

责怪 发表于 2025-3-22 06:31:31

http://reply.papertrans.cn/64/6363/636238/636238_4.png

无法解释 发表于 2025-3-22 11:55:34

0893-3405 EOS robustness ofintegrated circuits in order to address the on-chip EOS protectionissue. Fundamental understanding of the physical phenomena leading todevice f978-1-4613-6205-0978-1-4615-2788-6Series ISSN 0893-3405

分贝 发表于 2025-3-22 16:55:52

Book 1995 the onset of failure which is a3-D electrothermal problem. For these reasons, it is important todevelop and use an adequate measure of the EOS robustness ofintegrated circuits in order to address the on-chip EOS protectionissue. Fundamental understanding of the physical phenomena leading todevice f

永久 发表于 2025-3-22 19:58:08

http://reply.papertrans.cn/64/6363/636238/636238_7.png

增长 发表于 2025-3-22 23:54:15

0893-3405 ility concerns are becoming more serious with the downwardscaling of device feature sizes..Modeling of Electrical Overstressin. .Integrated Circuits. presents a comprehensive analysis ofEOS/ESD-related failures in I/O protection devices in integratedcircuits. .The design of I/O protection circuits h

intangibility 发表于 2025-3-23 01:58:49

Book 1995erns are becoming more serious with the downwardscaling of device feature sizes..Modeling of Electrical Overstressin. .Integrated Circuits. presents a comprehensive analysis ofEOS/ESD-related failures in I/O protection devices in integratedcircuits. .The design of I/O protection circuits has been do

ureter 发表于 2025-3-23 05:41:53

Major Processes Shaping the Evolution of Agriculture, Biotechnology, and Biodiversityhnologies. The trends covered include trade and capital market liberalization, the rise of the environmental movement, consumerism, privatization and devolution of government services, and the emergence of the information age. We find that trade liberalization is likely to lead to increased incentiv
页: [1] 2 3 4
查看完整版本: Titlebook: Modeling of Electrical Overstress in Integrated Circuits; Carlos H. Díaz,Sung-Mo Kang,Charvaka Duvvury Book 1995 Kluwer Academic Publisher