CRUC
发表于 2025-3-25 07:18:49
M-Type Microwave Electron Devicesnstant fields, which affect its ineraction with microwave electric field. Liniar theory of M-type devises and elements of non-linear theory are described, main types of the devices, their parametrs and characteristics are considered and their design are shown.
COLON
发表于 2025-3-25 09:07:57
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合唱队
发表于 2025-3-25 12:11:10
Diodes with Negative Dynamic Resistanceypes of this devices: IMPATT diodes, BarITT diodes, Gunn and tunnel diodes. Desctiption of theirs structures, theoretical aspects of functionality, characteristics and basic schemes with NDR devices are presented.
怎样才咆哮
发表于 2025-3-25 17:46:51
Microwave Transistorsh a Schottky barrier control on gallium arsenide. Equivalent schemes, physical-topological models and temperature models are presented. Features of functioning, parameters and characteristics are discussed. The noise model is analized.
Parallel
发表于 2025-3-25 22:39:30
978-3-030-09858-2Springer International Publishing AG 2018
约会
发表于 2025-3-26 02:51:59
Microwave Electronics978-3-319-68891-6Series ISSN 1437-0387 Series E-ISSN 2197-6643
Charlatan
发表于 2025-3-26 06:58:26
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Fresco
发表于 2025-3-26 10:07:00
Springer Series in Advanced Microelectronicshttp://image.papertrans.cn/m/image/633579.jpg
CHYME
发表于 2025-3-26 13:17:51
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Nibble
发表于 2025-3-26 18:48:35
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