揭穿真相
发表于 2025-3-26 23:18:38
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延期
发表于 2025-3-27 01:22:55
Exploiting RF MEMS Switches for Pattern Reconfigurable Parasitic Antennas,onsidered antenna structure (operating in the X-band) is able to steer the beam from broadside to end fire pattern keeping a return loss below −10 dB and a good gain in all the antenna configurations.
BRAND
发表于 2025-3-27 07:35:40
Performance Analysis of Defective 1D Photonic Crystal Structure for Detection of Hemoglobin Concentuted for studying the effectiveness of the proposed sensor. Additionally, the simple structure with notable sensing performance makes the proposed sensor a suitable candidate for biosensing applications.
致词
发表于 2025-3-27 10:59:26
Analysis of Optical Effects of Different Anodes on Organic Light-Emitting Diode,w the optical effects of the anode material with Graphene has better enhancement in light output compared to other materials. This work shows the far field contours of all the anode materials that improve light production and that optimum emission from an OLED to check the alternative to indium tin oxide anode material.
Detoxification
发表于 2025-3-27 16:52:27
Rapid Detection of Biomolecules Using Dielectric Modulated Ferroelectric GaN HEMT,can be used as sensing metrics. A significant rise in the drain current with the increasing permittivity value of biomolecule in the nanocavity region. There is a maximum positive shift in threshold voltage that is scrutinized in case of protein as it bears low dielectric constant and also device offers good sensitivity performance.
秘方药
发表于 2025-3-27 20:49:11
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affluent
发表于 2025-3-28 00:47:10
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遗忘
发表于 2025-3-28 03:45:26
Iterative Approach for Low Actuation Voltage RF MEMS Switch, is 2.4 V. The membrane resonant frequency is 57.5 kHz. Because of the incorporation of multiple triangular membranes (. and .) and HfO. as a dielectric material, the switch is offering high isolation of −80 dB. The overall switch has six pins, i.e., RF., RF., VB., VB., GND., and GND..
Champion
发表于 2025-3-28 07:35:35
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菊花
发表于 2025-3-28 13:36:57
Performance Evaluation of Double-Gate Tunnel Field-Effect Transistor with Germanium Epitaxial Layermore, the simulation results show a high cut-off frequency (f.) of 65 GHz, a decent intrinsic delay of 3 pSec, and an energy-delay product (EDP) of 0.006 fJ.nS/µm at a supply voltage (V.) of 0.7 V. The design concept and effect of design parameters on the device performance are thoroughly discussed in this study.