critique 发表于 2025-3-28 17:11:08
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istances spanning a difference of over 20 orders of magnitude. Interfaces between these materials include dielectric-semiconductor, metal-semiconductor and metal-dielectric. A well-known example of the first is the SiO.–Si interface in the metal-dielectric-semiconductor structure in a Si transistor.Customary 发表于 2025-3-29 02:21:15
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Gianfranco Walsh,David B. Dose,Christopher Funkewer conversion efficiency (PCE), low materials cost, diverse deposition routes (e.g., vapor phase, solution-processable fabrication), and potential use in tandem configurations, due to their bandgap tunability. PSCs potentially have additional nontraditional applications given their compatibility wiProstaglandins 发表于 2025-3-29 12:15:57
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uding a mechanistic discussion of electrochemical charge sto.Rapid growth in the research and development of clean energy storage techniques has yielded a significant number of electrochemically active compounds/materials possessing enormous potential to facilitate the fabrication of next generation刺激 发表于 2025-3-29 22:42:11
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Gianfranco Walsh,David B. Dose,Christopher Funkeit is relatively stable and can be easily carried through several synthetic steps before being converted. The conversions of nitriles under mild conditions are thus very important transformations. Great progress has been made in the last decade in the use of metal pincer complexes as catalysts for q