折磨 发表于 2025-3-23 10:39:46
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Maria Raquel Freire,Licínia Simãoides and silicates which have drawn considerable attention as alternative high-k materials. For the oxides, three crystalline phases of dioxide are considered. The first two are the cubic and tetragonal structures which exist for hafnia HfO. or zirconia ZrO., while it is hypothetical for titania TiO帽子 发表于 2025-3-24 02:39:26
Rick Fawnremendous difficulties encountered during the development of gate dielectrics on GaAs. The understanding that modern gate dielectrics are typically layered structures with the immediate dielectric/semiconductor interface having substantially different (and often mutually exclusive) requirements compTAG 发表于 2025-3-24 07:12:58
Jason Bruder.The editors have earned their spurs in their fields of scie.This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we chooICLE 发表于 2025-3-24 13:09:13
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Andreas Marazisremendous difficulties encountered during the development of gate dielectrics on GaAs. The understanding that modern gate dielectrics are typically layered structures with the immediate dielectric/semiconductor interface having substantially different (and often mutually exclusive) requirements compcarbohydrate 发表于 2025-3-25 02:20:41
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