heckle 发表于 2025-3-27 00:49:50
Magnetic Tunnel Junctions,rent on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically. We will cover Al-O and MgO based junctions and present highly spin-polarized electrode materials such as Heusler alloonlooker 发表于 2025-3-27 04:26:17
Ferromagnet/Semiconductor Heterostructures and Spininjection,ules we describe spin injection via magnetic semiconductors and ferromagnetic metal contacts. The concepts for optical detection of spin injection and the problem of spin relaxation in the semiconductor are analyzed before we finally address spin - optoelectronic devices, namely the spin light-emitt繁荣中国 发表于 2025-3-27 07:33:38
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