颠簸地移动
发表于 2025-3-28 17:04:23
The Mott Mobility Edge and the Magnetic PolaronThis paper reviews the metal-insulator transition in a magnetic semiconductor with random potential fluctuations. The transition is explained in terms of Mott’s mobility edge in disordered systems and the magnetic polaron.
habile
发表于 2025-3-28 20:55:05
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commensurate
发表于 2025-3-29 02:19:33
Metal-Insulator Transitions in Pure and Doped VO2ll as theoretical investigations. Up to now more than six hundred papers have been devoted to the subject, most of them published in the seventies, as a consequence of better knowledge on the narrow band materials, following a series of articles of Mott (2) and their quantitative treatment by Hubbard (3)
记忆法
发表于 2025-3-29 05:20:14
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mediocrity
发表于 2025-3-29 09:50:58
The Metal-Insulator Transition in Liquid, Doped Crystalline and Amorphous Semiconductors: The Effectcalized states in liquid, doped crystalline, and amorphous semiconductors. Major emphasis is placed on the need of taking into account electron-electron interaction in both the insulating and metallic states in the interpretation of the experimental relationships observed.
amplitude
发表于 2025-3-29 12:14:34
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没有希望
发表于 2025-3-29 17:59:33
Tuning the Metal-Insulator Transition in N-Type Silicon with a Magnetic Field it has been widely recognized that a magnetic field could be used to tune a metallic sample through the Metal-Insulator (MI) transition. Several experimental groups. have successfully tuned n-type InSb through the MI transition with modest magnetic fields. For InSb it is easy to bring the magnetic
熄灭
发表于 2025-3-29 23:01:23
Metal-Semiconductor Transitions in Doped IV-VI Semiconductorshe right, there is another closeknit family of nonmetals, the column-V semimetals As, Sb, and Bi, and the IV-VI semiconductor compounds. This review will focus on PbTe, SnTe, GeTe, and some of their alloys.. Up until a few years ago, there would have been very little to say about the metal-semicondu
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发表于 2025-3-30 01:37:27
Metal-Insulator Transitions in Pure and Doped VO2ll as theoretical investigations. Up to now more than six hundred papers have been devoted to the subject, most of them published in the seventies, as a consequence of better knowledge on the narrow band materials, following a series of articles of Mott (2) and their quantitative treatment by Hubbar
grotto
发表于 2025-3-30 08:01:33
Composition-Controlled Metal-Insulator Transitions in Metal Oxidesnt of view of metal-insulator (MI) transitions in strongly correlated systemm.. These oxides exhibit enormous range of interesting properties. Thus, LaTiO. and LaNiO. have low resistivities at room temperature (~10. and ~10. Ω cm respectively). LaNiO. has a positive temperature coefficient of resist