鸵鸟
发表于 2025-3-23 11:59:23
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innovation
发表于 2025-3-23 14:36:54
Trans-anticonstitutionalisms and legal cases, I hold that these phenomena are weakening not only modern constitutionalism as a normative and political fact, but also the conception of democratic constitutionalism as a pivotal normative horizon of world society. Paradoxically, the destruction of modern, democratic constitution
想象
发表于 2025-3-23 21:41:19
A Few Notes on the Uses of Historiography in Sociology: The Case of World Society and the Necessity ainly unexplored by the historian community, but the empirical results from the research with historical sources can open new theoretical discussions and work as a testing platform for the applicability of theories.
coalition
发表于 2025-3-23 23:55:35
The Intersystemic Rationality of Administrative Law: Reflexiveness, Structural Couplings and Environtive legal science, allowing the scholar to look at Administrative Law from a different angle and engage in a re-description and reconceptualization of its main institutes and categories..My central thesis is that current Administrative Law evinces an intersystemic rationality, translated in legal c
NEXUS
发表于 2025-3-24 04:23:54
Book 2021 turn, the last section of the book, “Systems Theory and Public Law,” addresses systems theory issues in the fields of legal history and administrative law..The book presents a relevant and original discussion encompassing such diverse fields as constitutional theory, international law, systems theo
小隔间
发表于 2025-3-24 07:16:31
and Ge pMOSFETs, eventually dominating over NBTI. For SiGe devices, a gate stack optimization which we have previously shown to minimize NBTI is found here to reduce also CHC degradation, ensuring sufficient reliability. Conversely, the reliability of . Ge channel devices appears to be limited by CH
BOOST
发表于 2025-3-24 11:44:28
re-existing bulk oxide defects filling contribute significantly to the total CHC degradation. Though the CHC degradation magnitude is higher in narrower FinFETs, the degradation mechanism does not change as a function of fin width..Lower CHC degradation is observed in 45° rotated substrate devices,
小淡水鱼
发表于 2025-3-24 17:51:29
Hauke Brunkhorstkage and the strong localization of hot-carrier damage. Our model is linked and compared with other approaches to HCD simulations. Special attention is paid to the importance of the particular model ingredients, such as competing mechanisms of the Si–H bond dissociation, electron–electron scattering
visceral-fat
发表于 2025-3-24 19:11:01
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Euphonious
发表于 2025-3-24 23:12:25
dations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS d978-1-4684-8549-3978-1-4684-8547-9