向下 发表于 2025-3-28 15:39:31
Lateral Alignment of Epitaxial Quantum Dots978-3-540-46936-0Series ISSN 1434-4904 Series E-ISSN 2197-7127逢迎白雪 发表于 2025-3-28 21:49:30
https://doi.org/10.1007/978-3-540-46936-0Modulation; Nanodroplet; Phase; Potential; deposition; epitaxy; microscopy; model; nanostructure; nanotechnolsemble 发表于 2025-3-28 23:57:00
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Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001)sional (3D) nanocrystals after completion of a two-dimensional (2D) wetting layer of one or several monolayers (MLs) . The formation of such 3D nanocrystals in SK growth was convincingly demonstrated for the first time in 1990, using scanning tunneling microscopy (STM) of Ge grown on the technoloobstinate 发表于 2025-3-29 16:39:47
Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactionstem for exploring fundamental scientific issues, offering complete chemical miscibility of the constituents, relatively low volatility, a simple diamond cubic lattice, a range of lattice misfit up to 4% for pure Ge on Si, and a nearly linear dependence of lattice parameter on alloy composition .declamation 发表于 2025-3-29 21:20:50
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