excrete
发表于 2025-3-30 10:18:54
Johann A. Donishe sciences in the field of pure consciousness. Husserl believes that through his phenomenology he can provide eternal significance for the spiritual life of human beings. I think that intentionality is a key concept in the theory of pure consciousness in Husserl’s phenomenology, that for Husserl it
enflame
发表于 2025-3-30 15:58:06
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immunity
发表于 2025-3-30 20:21:46
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aptitude
发表于 2025-3-31 00:02:04
Johann A. Donisapplications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on h
职业
发表于 2025-3-31 01:33:55
Johann A. Donisapplications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on h
起草
发表于 2025-3-31 06:27:23
Johann A. Donisof artificial and heavily modified water bodies.Includes supDisclaimer The work reported in this book was carried out prior to the publication of the final guidance document on Heavily Modified and Artificial Water Bodies of the Water Framework Directive Common Implementation Strategy. The European
NIL
发表于 2025-3-31 11:34:04
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ventilate
发表于 2025-3-31 16:01:38
Michaela Trapl-Grundschober100 open research problems.Covers a wide range of different This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed m
Colonoscopy
发表于 2025-3-31 18:49:34
Johann A. Donis all types of anisotropies of the energy band spectrum within the framework of k.p formalism in the presence of Gaussian band tails. We have also investigated the ER for QWs of HD III-V, II-VI, IV-VI, stressed Kane type semiconductors, Te, GaP, PtSb_{2}, Bi2Te_{3}, Ge and GaSb on the basis of newly