NOVA 发表于 2025-3-23 11:50:58
Scanning Tunneling Microscopy Study of Ge Molecular Beam Epitaxy on Si(111) 7×7c. Triangular shaped islands and large reconstructed areas of (5×5) or (7×7) are observed. For coverages of about 5 ML the misfit of germanium to silicon leads to strain, which results in a quite disordered layer. For coverages of more than 10 ML the layer relaxes and assimilates the germanium bulk behavior. Here dislocations have been observed.landfill 发表于 2025-3-23 16:40:15
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Ole G. Mouritsenneed .Game Development Tool Essentials... .Covers readily available tools and tools developers can build themselves.. .Presents 96 code samples, 81 illustrations, and e978-1-4302-6700-3978-1-4302-6701-0Cerumen 发表于 2025-3-24 01:59:49
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http://reply.papertrans.cn/55/5431/543078/543078_18.pngextemporaneous 发表于 2025-3-24 20:25:12
G. Le Lay,M. Abraham,K. Hricovini,J. E. Bonnetneed .Game Development Tool Essentials... .Covers readily available tools and tools developers can build themselves.. .Presents 96 code samples, 81 illustrations, and e978-1-4302-6700-3978-1-4302-6701-0Contend 发表于 2025-3-25 02:59:55
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