Fulminate
发表于 2025-3-25 07:15:03
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Frisky
发表于 2025-3-25 10:28:12
M. Albert Vanniceis crucially dependent on the drain current – voltage locus curve during the switching event, the switching reliability of GaN transistor depends on the switching locus. Accordingly a concept of Switching Safe Operating Area (SSOA) is proposed to define the switching conditions wherein the device ca
正常
发表于 2025-3-25 12:43:07
M. Albert Vannicelity of MOCVD to achieve the high throughput Ga.O. epitaxial layer growth needed for high voltage power device and deep ultraviolet solar-blind photodetector commercial applications. This chapter discusses the following topics: the selection of suitable metalorganic precursors and oxygen sources use
粗语
发表于 2025-3-25 17:38:05
M. Albert Vannice/or low growth temperatures are necessary for a stoichiometric transfer of the target composition to the epilayer which is explained by the desorption of gallium suboxides occurring otherwise. Further, we resume solubility limits and the dependence of structural, optical and vibrational properties o
1FAWN
发表于 2025-3-25 20:26:14
M. Albert Vannice/or low growth temperatures are necessary for a stoichiometric transfer of the target composition to the epilayer which is explained by the desorption of gallium suboxides occurring otherwise. Further, we resume solubility limits and the dependence of structural, optical and vibrational properties o
constellation
发表于 2025-3-26 03:09:21
lity of MOCVD to achieve the high throughput Ga.O. epitaxial layer growth needed for high voltage power device and deep ultraviolet solar-blind photodetector commercial applications. This chapter discusses the following topics: the selection of suitable metalorganic precursors and oxygen sources use
新手
发表于 2025-3-26 05:24:30
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Pde5-Inhibitors
发表于 2025-3-26 09:51:19
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heart-murmur
发表于 2025-3-26 16:20:07
https://doi.org/10.1007/b136380Absorption; catalysis; chemical engineering; chemistry; crystal; heat transfer; materials science
委屈
发表于 2025-3-26 17:46:17
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