Amendment
发表于 2025-3-26 21:09:27
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强行引入
发表于 2025-3-27 01:59:46
Swift Heavy Ion Irradiation of Amorphous Semiconductorson in selected amorphous Group IV and III-V materials are summarized. Complementary molecular dynamics simulations provide additional understanding and in combination with experiment enables new mechanistic insight at the atomic scale.
Mhc-Molecule
发表于 2025-3-27 08:02:22
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枪支
发表于 2025-3-27 10:28:08
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Introduction
发表于 2025-3-27 16:15:21
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dowagers-hump
发表于 2025-3-27 18:05:23
Ion-Solid Interactions, however, also some classical approaches are presented. For amorphous solids, mainly considered here, the binary collisions can be assumed to be statistically independent and the physical quantities (e.g. energy and angular distributions) are obtained by statistics. In the case of crystalline solids, only some special effects are described.
innate
发表于 2025-3-28 00:19:42
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SSRIS
发表于 2025-3-28 05:03:00
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小样他闲聊
发表于 2025-3-28 06:49:57
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污秽
发表于 2025-3-28 10:26:00
Primary Processes of Damage Formation in Semiconductorsd in a third group of materials amorphisation by ion implantation is not observed even not at low temperatures for moderate ion fluences which do not significantly alter the stoichiometry of the material. Various models are applied for describing the damage evolution. This represents a further step